Paper Info
Title
Low power, area efficient, and temperature-variation tolerant bidirectional current source for sensor applications
Abstract
This paper presents a novel temperature invariant, low power, and area efficient bidirectional current source. The current source can be used as an analog front end R-V converter for different types of resistive sensor applications. The current source is based on weighted sum of thermal voltages and difference of threshold voltages. High VTH transistors operating in sub-threshold region along with regular VTH transistors in strong inversion region form a temperature invariant current source. A current switching technique is presented in this paper for producing a periodic bidirectional current source, fabricated in 180nm CMOS technology for low cost sensor applications. The maximum total current variation simulated is 13nA (¿0.5%) for typical value of ¿715nA reference current over the temperature range of 25-125¿C. The fabricated test circuit lies in SNFP corner and shows ¿1% variation in positive and ¿1.67% variation over the temperature range of 25-125¿C. Total area consumed by the circuit is 100¿m×35¿m. The behavior of the bidirectional current source has been tested using a piezo-resistive cantilever based explosive detector sensor, with 20ppb TNT vapor concentration and 10 parts per billion resolutions with sensitivity of 10¿V/ppb.
Year
DOI
Venue
2016
10.1016/j.mejo.2015.12.010
Microelectronics Journal
Keywords
Field
DocType
PTAT,CTAT,Temperature invariant current source,Bidirectional current source,Sensors
Atmospheric temperature range,Analog front-end,Current source,Voltage,Dependent source,Electronic engineering,CMOS,Engineering,Transistor,Electrical engineering,Detector
Journal
Volume
Issue
ISSN
49
C
0026-2692
Citations 
PageRank 
References 
0
0.34
11
Authors
5
Name
Order
Citations
PageRank
Neena A. Gilda131.46
Hande Vinayak Gopal200.68
Dinesh Kumar Sharma34811.91
V. Ramgopal Rao42010.28
Maryam Shojaei Baghini58629.67