Paper Info
Title
Numerical Discretization of Energy-Transport Models for Semiconductors with Nonparabolic Band Structure
Abstract
The energy-transport models describe the flow of electrons through a semiconductor crystal, influenced by diffusive, electrical and thermal effects. They consist of the continuity equations for the mass and the energy, coupled to Poisson''s equation for the electric potential. These models can be derived from the semiconductor Boltzmann equation. This paper consists of two parts. The first part concerns with the modelling of the energy-transport system. The diffusion coefficients and the energy relaxation term are computed in terms of the electron density and temperature, under the assumptions of non-degenerate statistics and non-parabolic band diagrams. The equations can be rewritten in a drift-diffusion formulation which is used for the numerical discretization. In the second part, the stationary energy-transport equations are discretized using the exponential fitting mixed finite element method in one space dimension. Numerical simulations of a ballistic diode are performed.
Year
DOI
Venue
2000
10.1137/S1064827599360972
Numerical discretization of energy-transport models for semiconductors with non-parabolic band structure
Keywords
Field
DocType
continuity equation,part concern,energy-transport system,stationary energy-transport equation,semiconductor Boltzmann equation,semiconductor crystal,energy relaxation term,non-parabolic band structure,numerical simulation,numerical discretization,energy-transport model
Convection–diffusion equation,Discretization,Boltzmann equation,Continuity equation,Poisson's equation,Mathematical analysis,Finite element method,Diffusion equation,Mathematics,Mixed finite element method
Journal
Volume
Issue
ISSN
22
3
1064-8275
Citations 
PageRank 
References 
12
2.25
0
Authors
3
Name
Order
Citations
PageRank
Pierre Degond125143.75
Ansgar Jungely29120.55
Paola Pietra36611.91