Name
Abstract | ||
|---|---|---|
Orbital occupancy control in correlated oxides allows the realization of new electronic phases and collective state switching under external stimuli. The resultant structural and electronic phase transitions provide an elegant way to encode, store, and process information. In this review, we examine the utilization of Mott metal-to-insulator transitions, for memory and neuromorphic devices. We emp... |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/JPROC.2015.2431914 | Proceedings of the IEEE |
Keywords | Field | DocType |
Insulators,Random access memory,Information processing,Neuromorphics,Memory management,Encoding,Magnetic hysteresis | State switching,Information processing,Coupling,Phase transition,Phase change,Neuromorphic engineering,Electronic engineering,Memory management,Electrical engineering,Materials science,Encoding (memory) | Journal |
Volume | Issue | ISSN |
103 | 8 | 0018-9219 |
Citations | PageRank | References |
3 | 0.44 | 3 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| You Zhou | 1 | 3 | 0.44 |
| Shriram Ramanathan | 2 | 7 | 1.57 |