Name
Abstract | ||
|---|---|---|
This paper reports on the dynamic behavior of dual coupled memristors (MRs) in serial and parallel connections in consideration of polarity combination and coupling strength. Based on the constitutive relations, two flux coupled MRs are adopted for demonstration to theoretically exhibit the variation of memductance in terms of flux, charge, voltage, and current. The coupled MRs are also serially connected with a regular resistor to further explore its memristive behavior. Theoretical analysis reported in this paper is confirmed via a simulation study, and then an experimental investigation is carried out using a practical circuit emulating the dual coupled MRs. Good agreement between experimental and simulation results confirms that dual coupled MRs in composite connections behave as a new MR with higher complexity. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/TCSI.2015.2418836 | IEEE Transactions on Circuits and Systems |
Keywords | Field | DocType |
Coupling strength, memductance, memristor, parallel connection, serial connection | Memristor circuits,Memristor,Coupling,Computer science,Voltage,Hysteresis,Electronic engineering,Resistor,Coupling strength | Journal |
Volume | Issue | ISSN |
62 | 6 | 1549-8328 |
Citations | PageRank | References |
7 | 0.54 | 10 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Dongsheng Yu | 1 | 14 | 4.38 |
| Iu, H.H.C. | 2 | 15 | 8.22 |
| Yan Liang | 3 | 24 | 8.49 |
| T. Fernando | 4 | 185 | 39.37 |
| Leon O. Chua | 5 | 1860 | 497.65 |