Name
Abstract | ||
|---|---|---|
A low loss intelligent power module (IPM) that specifically designed for high performance frequency-alterable air conditioner applications is proposed. This IPM utilizes 600 V trench gate field stop insulated gate bipolar transistors (TFS-IGBTs) as the main switching devices to deliver extremely low conduction and switching losses. In addition, 600 V SiC schottky barrier diodes (SBDs) are employed as the freewheeling diodes. Compared to conventional silicon fast recovery diodes (FRDs) SiC SBDs exhibit practically no reverse recovery loss, hence can further reduce the power loss of the IPM. Experimental results reveal that the power loss of the proposed IPM is between 3.5 similar to 21.7 W at different compressor frequencies from 10 to 70 Hz, which achieving up to 12.5%similar to 25.5% improvement when compared to the state-of-the-art conventional Si-based IGBT IPM. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1587/transele.E98.C.981 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
power module, SiC, power loss, inverter | SBDS,Inverter,Electronic engineering,Power module,Power loss,Engineering | Journal |
Volume | Issue | ISSN |
E98C | 10 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
3 | ||