Name
Abstract | ||
|---|---|---|
This paper deals with the diffusion approximation of the Boltzmann equation for semiconductors in the presence of spatially oscillating electrostatic potential. When the oscillation period is of the same order of magnitude as the mean free path, the asymptotics leads to the drift-diffusion equation with a homogenized electrostatic potential and a diffusion matrix involving the small-scale information. The convergence is proven rigorously for Boltzmann statistics, while it is incomplete for Fermi-Dirac statistics. |
Year | DOI | Venue |
|---|---|---|
2005 | 10.1137/040611227 | MULTISCALE MODELING & SIMULATION |
Keywords | Field | DocType |
semiconductor Boltzmann equation,drift-diffusion equation,diffusion approximation,homogenization,two-scale convergence,relative entropy | Statistical physics,Poisson–Boltzmann equation,Convection–diffusion equation,Mathematical optimization,Boltzmann equation,Lattice Boltzmann methods,Boltzmann's entropy formula,Boltzmann relation,Diffusion equation,Direct simulation Monte Carlo,Physics | Journal |
Volume | Issue | ISSN |
4 | 3 | 1540-3459 |
Citations | PageRank | References |
2 | 0.53 | 1 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Naoufel Ben Abdallah | 1 | 39 | 8.18 |
| Mohamed Lazhar Tayeb | 2 | 3 | 1.40 |