Name
Title | ||
|---|---|---|
Analysis of high power microwave induced degradation and damage effects in AlGaAs/InGaAs pHEMTs |
Abstract | ||
|---|---|---|
•High power microwave (HPM) induced damage mechanism in pHEMT.•HPM induced gate metal diffusion results in DC/RF performance degradation.•RF performance deterioration is utilized as the degradation (or damage) criteria.•HPM induced failure of LNA is attributed to the failure of the first stage pHEMT.•Physical evidences are revealed through SEM to validate the mechanisms analysis. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.microrel.2015.06.002 | Microelectronics Reliability |
Keywords | Field | DocType |
pHEMT,High power microwave,Degradation,Damage | Microwave,Electric field,Voltage,Noise figure,Electronic engineering,Engineering,High-electron-mobility transistor,Transistor,Electron mobility,Amplifier | Journal |
Volume | Issue | ISSN |
55 | 8 | 0026-2714 |
Citations | PageRank | References |
2 | 0.66 | 5 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Xinhai Yu | 1 | 2 | 1.00 |
| ChangChun Chai | 2 | 8 | 4.97 |
| Liu Yang | 3 | 200 | 33.54 |
| Yin-Tang Yang | 4 | 334 | 92.74 |
| Qingyang Fan | 5 | 2 | 1.33 |