Name
Abstract | ||
|---|---|---|
Wide-bandgap power devices such as those made from silicon carbide (SiC) and gallium nitride (GaN) offer superior electrical performance over conventional silicon (Si) devices for high-voltage applications. Their fast switching operation and low switching losses help increase the efficiency of power conversion circuit. This study focuses on the switching characteristics of a GaN Schottky barrier diode (SBD) and investigates the conducted noise characteristics in a DC-DC boost converter by comparing a Si PiN diode and a SiC SBD. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1587/elex.12.20150912 | IEICE ELECTRONICS EXPRESS |
Keywords | Field | DocType |
gallium nitride Schottky barrier diode, silicon carbide Schottky barrier diode, reverse recovery, DC-DC converter, conducted noise | Schottky barrier,Metal–semiconductor junction,Computer science,Backward diode,Reverse recovery,Electronic engineering,Schottky diode,Dc dc converter,Optoelectronics | Journal |
Volume | Issue | ISSN |
12 | 24 | 1349-2543 |
Citations | PageRank | References |
0 | 0.34 | 1 |
Authors | ||
5 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Takaaki Ibuchi | 1 | 1 | 2.32 |
| Tsuyoshi Funaki | 2 | 36 | 19.54 |
| Shinji Ujita | 3 | 0 | 0.68 |
| masahiro ishida | 4 | 1 | 1.08 |
| Tetsuzo Ueda | 5 | 2 | 3.60 |