Name
Abstract | ||
|---|---|---|
Low-frequency noise (LFN) measurements are largely used for interface quality characterization in MOSFETs. In this work, a detailed investigation of LFN technique applied to pseudo-MOSFETs in bare silicon-on-insulator (SOI) substrates is provided. A physical model capable to describe the experimental results is proposed and validated using different die areas and inter-probe distances. The effective silicon area contributing to the noise signal, the impact of defects induced by probes and the possibility to extract interface trap density are addressed. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1016/j.sse.2016.07.012 | Solid-State Electronics |
Keywords | Field | DocType |
SOI,Pseudo-MOSFET,Interface trap density,Low-frequency noise | Silicon on insulator,Wafer,Flicker noise,Analytical chemistry,Noise measurement,Infrasound,Electronic engineering,Trap density,MOSFET,Materials science,Silicon | Conference |
Volume | ISSN | Citations |
125 | 0038-1101 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Luca Pirro | 1 | 0 | 0.34 |
| Irina Ionica | 2 | 0 | 0.68 |
| Sorin Cristoloveanu | 3 | 3 | 6.73 |
| Gérard Ghibaudo | 4 | 51 | 34.87 |