Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution - Citegraph

Paper Info

Title
Fabrication of high performance AlGaN/GaN FinFET by utilizing anisotropic wet etching in TMAH solution

Abstract
AlGaN/GaN-based fin-shaped field-effect transistors (FinFETs) with very steep sidewall and various fin widths (W-fin) have been fabricated by utilizing electron-beam lithography and additional anisotropic sidewall wet etch in tetramethyl ammonium hydroxide (TMAH) solution. The device with W-fin of 180 nm exhibits normally-on performance with threshold voltage of - 3.5 V and extremely broad transconductance (g(m)) characteristic ranging from - 2 to similar to 3 V at V-D = 5 V which is essential for high linearity device performance. This broad g(m) characteristic is because the current from the side -wall MOS channel becomes comparable to that from the two-dimensional electron gas (2DEG) channel and hence significantly contributes to the total device current. On the other hand, devices with smaller W-fin = 50 and 100 nm exhibit normally-off performance with positive threshold voltage of 2.0 and 0.6 V, respectively, and less broad gm characteristics because the current from the side-wall MOS channel dominates the total device current.

Year	Venue	Keywords
2015	Proceedings of the European Solid-State Device Research Conference	AlGaN/GaN,FinFET,TMAll wet etch,2DEG channel,sidewall MOS channel
Field	DocType	ISSN
Analytical chemistry,Etching (microfabrication),Linearity,Electronic engineering,Lithography,Fermi gas,Transconductance,Transistor,Materials science,Threshold voltage,Fabrication	Conference	1930-8876
Citations	PageRank	References
0	0.34	0
Authors
9

Authors (9 rows)

Cited by (0 rows)

References (0 rows)

Name	Order	Citations	PageRank
Dong-Hyeok Son	1	0	0.68
Young-woo Jo	2	0	0.34
Ryun-Hwi Kim	3	0	0.34
Chan Heo	4	0	0.34
Jae Hwa Seo	5	0	1.35
Jin Su Kim	6	0	0.34
In Man Kang	7	0	2.70
Sorin Cristoloveanu	8	3	6.73
Junghee Lee	9	226	27.26

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