Name
Abstract | ||
|---|---|---|
This paper presents promising current-voltage characteristics of semiconductor-insulator-graphene tunnel diodes as the hot-electron injection unit in graphene base transistors (GBTs). We propose that by using a bilayer tunnel barrier one can effectively suppress the defect mediated carrier transport while enhancing the hot-electron emission through Fowler-Nordheim tunneling (FNT) and step tunneling (ST). A stack of TmSiO/TiO
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(1 nm/ 5.5 nm) is sandwiched between a highly doped Si substrate and a single layer graphene (SLG) as the electrodes. This tunnel diode exhibits high current with large nonlinearity suitable for the application in GBTs. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/ESSDERC.2015.7324749 | 2015 45th European Solid State Device Research Conference (ESSDERC) |
Keywords | Field | DocType |
graphene,hot-electron,tunneling,transistor,vertical,dielectric,bilayer | Quantum tunnelling,Graphene,Bilayer graphene,Diode,Tunnel diode,Graphene nanoribbons,Electronic engineering,Hot-carrier injection,Materials science,Bilayer | Conference |
ISSN | ISBN | Citations |
1930-8876 | 978-1-4673-7133-9 | 0 |
PageRank | References | Authors |
0.34 | 0 | 7 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Sam Vaziri | 1 | 0 | 1.69 |
| M. Belete | 2 | 0 | 0.34 |
| Anderson D. Smith | 3 | 0 | 1.35 |
| Eugenio Dentoni Litta | 4 | 0 | 0.68 |
| Grzegorz Lupina | 5 | 0 | 1.01 |
| Max C. Lemme | 6 | 18 | 3.57 |
| Mikael Östling | 7 | 1 | 3.36 |