Title
Investigations of vapor phase deposited transition metal dichalcogenide films for future electronic applications
Abstract
In this work we present investigations on ultrathin and monolayered transition metal dichalcogenides (TMDs). These recently have raised much interest for their applications in electronics. TMDs can be n- and p-type semiconductors and some of them undergo a change in band structure when thinned to a monolayer. In particular, with the TMD MoS2, a number of devices such as transistors, photodiodes, LEDs and chemical sensors have been demonstrated. In this report we focus on devices derived from MoS2 that is grown by methods that can be employed for the large scale synthesis.
Year
Venue
Field
2015
Proceedings of the European Solid-State Device Research Conference
Nanotechnology,Monolayer,Photonic crystal,Electronic band structure,Electronics,Light-emitting diode,Transistor,Materials science,Semiconductor,Photodiode
DocType
ISSN
Citations 
Conference
1930-8876
0
PageRank 
References 
Authors
0.34
0
6
Name
Order
Citations
PageRank
Toby Hallam100.34
Hye-Young Kim200.34
Maria O'Brien300.34
Riley Gatensby400.34
Niall McEvoy500.68
Georg S. Duesberg622.54