Name
Title | ||
|---|---|---|
Hot-carrier degradation in single-layer double-gated graphene field-effect transistors |
Abstract | ||
|---|---|---|
We report a first study of hot-carrier degradation (HCD) in graphene field-effect transistors (GFETs). Our results show that HCD in GFETs is recoverable, similarly to the bias-temperature instability (BTI). Depending on the top gate bias polarity, the presence of HCD may either accelerate or suppress BTI. Contrary to BTI, which mainly results in a change of the charged trap density in the oxide, HCD also leads to a mobility degradation which strongly correlates with the magnitude of the applied stress. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112834 | IRPS |
Field | DocType | ISSN |
Analytical chemistry,Hot carrier degradation,Logic gate,Oxide,Graphene,Electronic engineering,Graphene field effect transistors,Degradation (geology),Engineering,Transistor,Silicon | Conference | 1541-7026 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Yury Illarionov | 1 | 0 | 0.68 |
| m waltl | 2 | 2 | 3.25 |
| Anderson D. Smith | 3 | 0 | 0.34 |
| Sam Vaziri | 4 | 0 | 0.34 |
| Mikael Östling | 5 | 1 | 3.36 |
| Thomas Mueller | 6 | 76 | 9.51 |
| Max C. Lemme | 7 | 18 | 3.57 |
| T. Grasser | 8 | 21 | 10.90 |