Name
Title | ||
|---|---|---|
The relationship between border traps characterized by AC admittance and BTI in III-V MOS devices |
Abstract | ||
|---|---|---|
In this paper, we present the results of a detailed study done on the correlation between frequency dispersion observed in AC admittance measurements and threshold voltage shifts observed in BTI reliability measurements on III-V MOS devices. We developed a detailed AC admittance model for MOS devices with border traps to study the effect of trap parameters on the AC admittance. We show, with the help of simulations and experiments, a clear correlation between border trap characteristics in AC admittance and BTI behavior. In addition, we propose a simplified and quick method to qualitatively characterize border traps using G/ω as a measure for their density. |
Year | DOI | Venue |
|---|---|---|
2015 | 10.1109/IRPS.2015.7112742 | IRPS |
Keywords | Field | DocType |
MOS, III-V, AC Admittance, BTI, reliability, border traps, frequency dispersion | Frequency dispersion,Dispersion (optics),Analytical chemistry,Electronic engineering,Engineering,Indium gallium arsenide,Threshold voltage,Temperature measurement,Admittance | Conference |
ISSN | Citations | PageRank |
1541-7026 | 0 | 0.34 |
References | Authors | |
0 | 12 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Abhitosh Vais | 1 | 1 | 1.83 |
| Koen Martens | 2 | 0 | 0.34 |
| Jacopo Franco | 3 | 22 | 18.53 |
| Dennis Lin | 4 | 1 | 2.17 |
| A. Alian | 5 | 0 | 0.34 |
| Philippe Roussel | 6 | 35 | 8.04 |
| S. Sioncke | 7 | 0 | 1.01 |
| Nadine Collaert | 8 | 7 | 3.12 |
| Aaron Thean | 9 | 8 | 8.72 |
| Marc M. Heyns | 10 | 0 | 0.68 |
| Guido Groeseneken | 11 | 59 | 23.15 |
| Kristin De Meyer | 12 | 11 | 2.92 |