Title
A highly linear dual-band mixed-mode polar power amplifier in CMOS with an ultra-compact output network
Abstract
This paper presents a highly linear dual-band mixed-mode polar power amplifier (PA) fully integrated in a standard 65 nm bulk CMOS process. An ultra-compact single-transformer-based passive network provides optimum load impedance transformations simultaneously at two operating frequencies, parallel power combining, and even-harmonic rejection without any tuning elements or band selection switches....
Year
DOI
Venue
2015
10.1109/JSSC.2016.2582899
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Impedance,Dual band,Passive networks,Couplings,Computer architecture,Capacitors,Equivalent circuits
Computer science,Linearity,Impedance matching,Power factor,Linear amplifier,Electronic engineering,CMOS,RF power amplifier,Electrical engineering,Power bandwidth,Amplifier
Conference
Volume
Issue
ISSN
51
8
0018-9200
Citations 
PageRank 
References 
0
0.34
0
Authors
4
Name
Order
Citations
PageRank
Jong Seok Park1589.31
Song Hu2505.44
Yanjie Wang37310.93
Hua Wang421452.30