Name
Abstract | ||
|---|---|---|
This work presents a self-biased MOSFET threshold voltage V-T0 monitor. The threshold condition is defined based on a current-voltage relationship derived from a continuous physical model. The model is valid for any operating condition, from weak to strong inversion, and under triode or saturation regimes. The circuit consists in balancing two self-cascode cells operating at different inversion levels, where one of the transistors that compose these cells is biased at the threshold condition. The circuit is MOSFET-only (can be implemented in any standard digital process), and it operates with a power supply of less than 1 V, consuming tenths of nW. We propose a process independent design methodology, evaluating different trade-offs of accuracy, area and power consumption. Schematic simulation results, including Monte Carlo variability analysis, support the V-T0 monitoring behavior of the circuit with good accuracy on a 180 nm process. |
Year | Venue | Field |
|---|---|---|
2015 | 2015 IEEE INTERNATIONAL SYMPOSIUM ON CIRCUITS AND SYSTEMS (ISCAS) | Monte Carlo method,Semiconductor device modeling,Triode,Computer science,Power semiconductor device,Schematic,Electronic engineering,Transistor,MOSFET,Electrical engineering,Threshold voltage |
DocType | ISSN | Citations |
Conference | 0271-4302 | 2 |
PageRank | References | Authors |
0.40 | 7 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Oscar E. Mattia | 1 | 2 | 0.40 |
| hamilton klimach | 2 | 71 | 20.07 |
| sergio bampi | 3 | 496 | 102.12 |
| M. C. Schneider | 4 | 75 | 14.58 |