Name
Abstract | ||
|---|---|---|
Crosspoint architectures for ReRAM offer higher density, power efficiency, and endurance than most other emerging memory technologies, but they suffer sneak currents that cause significant write and read noise. Existing solutions limit the array size to ensure that the resulting noise falls within the margin between resistance levels but this might not be possible for MLC ReRAM memories. This paper builds a simple analytic model for the voltage drop and sneak currents in MLC-ReRAM arrays as a form of inter-cell-interference and proposes two techniques to minimize the resulting BER: spreading modulation and distribution shaping. |
Year | Venue | Field |
|---|---|---|
2015 | 2015 49TH ASILOMAR CONFERENCE ON SIGNALS, SYSTEMS AND COMPUTERS | Electrical efficiency,Computer science,Resistive touchscreen,Voltage drop,Modulation,Electronic engineering,Analytic model,Electrical engineering,Resistive random-access memory |
DocType | Citations | PageRank |
Conference | 1 | 0.36 |
References | Authors | |
7 | 3 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Tianqiong Luo | 1 | 3 | 1.76 |
| Olgica Milenkovic | 2 | 1650 | 130.62 |
| Borja Peleato | 3 | 4095 | 142.71 |