Title
Cu seeding using electroless deposition on Ru liner for high aspect ratio through-Si vias
Abstract
High aspect ratio through-Si vias (AR=16.7) filling has been achieved by using non-PVD seed metallization approach. We demonstrate the formation of conformal and thin electroless deposited Cu seed on Ru liner. The optimized ELD Cu process was conducted at room temperature on activated Ru surface, which can improve the ELD bath life time. The deposited Cu with 2,2′ bipyridyl shows smoother and higher purity inside the Cu film.
Year
DOI
Venue
2014
10.1109/3DIC.2014.7152147
2014 International 3D Systems Integration Conference (3DIC)
Keywords
Field
DocType
Through-Si Via,Cu seed,Metallization,Elecroless deposition,High aspect ratio
Surface cleaning,Annealing (metallurgy),Electroless deposition,Metallurgy,Aspect ratio (aeronautics),Materials science,Seeding,Life time
Conference
ISSN
Citations 
PageRank 
2164-0157
0
0.34
References 
Authors
0
7