Name
Abstract | ||
|---|---|---|
This paper describes the fabrication of 3D-stacked, dual-band sensitive device and their preliminary characterization results. The device consists of two 3D integrated detectors. The square chip with fabricated 4H-SiC p-i-n junction was mounted on commercial silicon chip with large area VIS-photodiode made by Institute of Electron Technology in Warsaw. The UV-photodetector was made on n-type 4H-SiC substrate with a double epitaxial layer in which aluminum was implanted to form a p-n junction close to the surface, and a silicon dioxide layer was formed for passivation, without a guard ring. The optical and electrical characterization of each of the photodiode structures has been discussed including dark current and spectral response measurements of large-area silicon diode with 4H-SiC p-i-n junction. All the diodes showed excellent rectification with low leakage current. |
Year | DOI | Venue |
|---|---|---|
2014 | 10.1109/3DIC.2014.7152181 | 2014 International 3D Systems Integration Conference (3DIC) |
Keywords | Field | DocType |
Silicon carbide photodiode,dual-band detector,three diemenstional (3D) chip stack,optical sensors | Silicon on insulator,Hybrid silicon laser,Silicon carbide,Diode,Dark current,Silicon bandgap temperature sensor,Materials science,Optoelectronics,Silicon,Photodiode | Conference |
ISSN | Citations | PageRank |
2164-0157 | 0 | 0.34 |
References | Authors | |
1 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| A. Kociubinski | 1 | 0 | 0.68 |
| M. Duk | 2 | 0 | 0.34 |
| Tomasz Bieniek | 3 | 0 | 2.03 |
| Grzegorz Janczyk | 4 | 0 | 1.69 |
| Michał Borecki | 5 | 2 | 2.29 |