Name
Title | ||
|---|---|---|
20.5 1.4THz, -13dBm-EIRP frequency multiplier chain using symmetric- and asymmetric-CV varactors in 65nm CMOS. |
Abstract | ||
|---|---|---|
THz region of electromagnetic spectrum has unique features making it attractive in spectroscopic studies, material inspection, tera-bit/sec communication, and biological- and non-biological-imaging applications. Owing to challenges in producing sufficiently strong signals, this region of spectrum has been exclusively served by III–V electronics or bulky cryogenic-temperature technologies such as QCLs [1]. Recently, advanced half-THz SiGe technologies and multi-element spatial power-combining techniques to increase the output power were successfully used to generate 0dBm of power at 0.53THz and −17dBm peak EIRP at 0.82THz [2–4]. Both solutions, however, suffer from low realized bandwidths (3%), limiting their utility in a slew of imaging and communication applications. Alternatively, high-quality accumulation-mode symmetric MOS varactors (SVARs) [5] in standard CMOS have been demonstrated as efficient odd-harmonic generators in broadband tripler and quintupler operating around 0.4THz [6] and 0.7THz [7], respectively. In this work, a 1.4THz multiplier chain of 10th order using MOS VARs in a 65nm standard CMOS process is demonstrated. The multiplier incorporates a new asymmetric VAR (ASVAR) for multiplication by 2 in addition to an SVAR for frequency quintupling. The circuit produces −13dBm peak EIRP at 1.33THz and operates over a setup-limited bandwidth of more than 11%. The fully integrated multiplier chain does not require any silicon lens or substrate thinning making it a compact and affordable solution for emerging THz applications. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ISSCC.2016.7418051 | ISSCC |
Keywords | Field | DocType |
CMOS analogue integrated circuits,Ge-Si alloys,III-V semiconductors,cryogenic electronics,frequency multipliers,harmonic generation,submillimetre wave integrated circuits,varactors,ASVAR,CMOS process,III-V electronics,QCL,SiGe,accumulation-mode symmetric MOS varactors,asymmetric-CV varactors,broadband tripler,cryogenic-temperature technologies,electromagnetic spectrum,frequency 0.53 THz,frequency 0.82 THz,frequency 1.33 THz,frequency 1.4 THz,frequency multiplier chain,frequency quintupling,multielement spatial power-combining techniques,odd-harmonic generators,quintupler,size 65 nm | Computer science,Electronic engineering,Multiplier (economics),Broadband,Frequency multiplier,CMOS,Bandwidth (signal processing),Electronics,Tera-,Electrical engineering,Silicon-germanium | Conference |
Citations | PageRank | References |
4 | 0.40 | 2 |
Authors | ||
3 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Zeshan Ahmad | 1 | 7 | 1.55 |
| Mark Lee | 2 | 4 | 0.40 |
| Kenneth K. O | 3 | 249 | 42.87 |