Title
6.7 A 1.2e− temporal noise 3D-stacked CMOS image sensor with comparator-based multiple-sampling PGA
Abstract
This paper presents a 1.2e-, 3D-stacked CMOS image sensor (CIS) for mobile applications. A key motivation for using a stacked configuration is to minimize the chip area. Also, since numerous components must be integrated into the bottom chip, a scaled 65nm CMOS process is adopted for the bottom chip. The developed CIS features 1.2e- temporal noise with extremely high power efficiency by employing a multiple-sampling (MS) technique. A 2nd-order incremental ΔΣ ADC with inverter-based switched-capacitor integrator realizes the MS technique with low power [1]. However, an exponential number of samples are required to reduce the quantization noise, and conversion speed worsens with higher bit resolution. An extended counting ADC, which is a blend of folding integration and cyclic ADC, attains high resolution with reduced conversion time [2-3]. However, an op-amp with high open-loop gain is required for good linearity and column-to-column matching characteristics, which increases power consumption. Also it is not suitable for scaled CMOS technology. An alternative approach is a single-slope (SS) based MS technique [4], in which two SS-ADCs convert the same pixel signal, and the readout signal is averaged in the digital domain, but the noise improvement is limited to -3dB and the power consumption and area occupation are roughly doubled.
Year
DOI
Venue
2016
10.1109/ISSCC.2016.7417937
2016 IEEE International Solid-State Circuits Conference (ISSCC)
Keywords
Field
DocType
noise improvement,readout signal,pixel signal,SS-ADC,single-slope based MS technique,power consumption,linearity characteristics,column-to-column matching characteristics,open-loop gain,op-amp,conversion time reduction,folding integration,cyclic ADC,conversion speed reduction,quantization noise reduction,inverter-based switched-capacitor integrator,2nd-order incremental ΔΣ ADC,power efficiency,scaled CMOS process,chip area minimization,mobile applications,CIS,comparator-based multiple-sampling PGA,1.2e- temporal noise 3D-stacked CMOS image sensor,size 65 nm
Inverter,Comparator,Noise measurement,Image sensor,Computer science,Integrator,Chip,Electronic engineering,CMOS,Quantization (signal processing),Electrical engineering
Conference
ISBN
Citations 
PageRank 
978-1-4673-9466-6
2
0.37
References 
Authors
3
9