Title | ||
---|---|---|
7.5 A 128Gb 2b/cell NAND flash memory in 14nm technology with tPROG=640µs and 800MB/s I/O rate |
Abstract | ||
---|---|---|
NAND flash memory is widely used as a cost-effective storage with high performance [1–2]. This paper presents a 128Gb multi-level cell (MLC) NAND flash memory with a 150 cells/string structure in 14nm CMOS that can be used as a cost-effective storage device. This paper also introduces several approaches to compensate for reliability and performance degradations caused by the 14nm transistors and the 150 cells/string structure. A technique was developed to suppress the background pattern dependency (BPD) by applying a low voltage to upper word lines (WLs) - the drain side(SSL side) WLs with respect to the location of the selected WL - during the verify sequence. Two techniques are also used to improve the program performance: equilibrium pulse scheme and smart start bias control scheme (SBC) in the MSB page. In addition, the first cycle recovery (FCR) of read enable (RE) and the bi-directional data strobe (DQS) is used to achieve a high speed I/O rate. As a result, a 640µs program time and a 800MB/s I/O rate is achieved. |
Year | DOI | Venue |
---|---|---|
2016 | 10.1109/ISSCC.2016.7417945 | 2016 IEEE International Solid-State Circuits Conference (ISSCC) |
Keywords | Field | DocType |
multi-level cell NAND flash memory,MLC NAND flash memory,cost-effective storage device,background pattern dependency,BPD,word lines,drain side WL,SSL side,program performance,equilibrium pulse scheme,smart start bias control scheme,SBC,MSB page,first cycle recovery,FCR,read enable,bi-directional data strobe,DQS,time 640 mus,bit rate 800 Mbit/s | Nand flash memory,Flash file system,Computer science,Electronic engineering,Input/output,CMOS,Low voltage,Computer hardware,Transistor,Very-large-scale integration,Data strobe encoding | Conference |
ISBN | Citations | PageRank |
978-1-4673-9466-6 | 8 | 0.57 |
References | Authors | |
3 | 45 |
Name | Order | Citations | PageRank |
---|---|---|---|
Seung-Jae Lee | 1 | 227 | 40.12 |
Jin-Yub Lee | 2 | 37 | 4.60 |
Il-Han Park | 3 | 40 | 6.31 |
Jong-Yeol Park | 4 | 19 | 2.89 |
Sung-Won Yun | 5 | 19 | 2.89 |
Minsu Kim | 6 | 414 | 64.12 |
Jong-Hoon Lee | 7 | 76 | 11.85 |
Min-Seok Kim | 8 | 169 | 27.35 |
Kangbin Lee | 9 | 24 | 2.55 |
Taeeun Kim | 10 | 8 | 0.57 |
Byungkyu Cho | 11 | 8 | 0.57 |
Dooho Cho | 12 | 8 | 0.57 |
Sangbum Yun | 13 | 8 | 0.57 |
Jung-No Im | 14 | 19 | 2.55 |
Hyejin Yim | 15 | 8 | 0.57 |
Kyung-hwa Kang | 16 | 8 | 0.91 |
Suchang Jeon | 17 | 8 | 0.57 |
Sungkyu Jo | 18 | 8 | 0.57 |
Yang-Lo Ahn | 19 | 45 | 4.18 |
Sung-Min Joe | 20 | 8 | 0.91 |
Suyong Kim | 21 | 8 | 0.57 |
Deok-kyun Woo | 22 | 8 | 0.57 |
Jiyoon Park | 23 | 26 | 2.39 |
Hyun Wook Park | 24 | 495 | 54.79 |
Young-Min Kim | 25 | 8 | 0.91 |
Jonghoon Park | 26 | 26 | 2.39 |
Yongsu Choi | 27 | 8 | 0.57 |
Makoto Hirano | 28 | 8 | 0.57 |
Jeong-Don Ihm | 29 | 65 | 10.22 |
Byunghoon Jeong | 30 | 17 | 2.84 |
Seon-Kyoo Lee | 31 | 12 | 1.17 |
Moosung Kim | 32 | 60 | 7.39 |
Hokil Lee | 33 | 8 | 0.57 |
sungwhan seo | 34 | 12 | 1.41 |
Hongsoo Jeon | 35 | 28 | 2.20 |
Chan-ho Kim | 36 | 8 | 0.91 |
Hyunggon Kim | 37 | 62 | 6.81 |
Jin-Tae Kim | 38 | 22 | 3.64 |
Yongsik Yim | 39 | 8 | 0.57 |
Hoosung Kim | 40 | 19 | 2.55 |
Dae-Seok Byeon | 41 | 78 | 11.94 |
Hyang-Ja Yang | 42 | 42 | 5.06 |
Ki-Tae Park | 43 | 197 | 19.35 |
Kyehyun Kyung | 44 | 142 | 18.84 |
Jeong-Hyuk Choi | 45 | 59 | 8.17 |