Abstract | ||
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A passive frequency quintupler using a symmetric accumulation MOS varactor is demonstrated for the first time in CMOS. The broadband (0.65-0.73THz) quintupler with an on-chip antenna fabricated in a 65-nm bulk CMOS process reaches a setup limited peak Effective Isotropic Radiated Power (EIRP) of -22dBm at 726GHz, and a minimum conversion loss of 34dB. This highest order multiplier realized in CMOS has the highest EIRP among any lens-less silicon based signal generation circuit operating above 500GHz. |
Year | Venue | DocType |
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2015 | Symposium on VLSI Circuits-Digest of Papers | Conference |
Citations | PageRank | References |
2 | 0.50 | 0 |
Authors | ||
2 |
Name | Order | Citations | PageRank |
---|---|---|---|
Zeshan Ahmad | 1 | 7 | 1.55 |
K. O. Kenneth | 2 | 10 | 3.54 |