Name
Abstract | ||
|---|---|---|
A monolithically integrated optoelectronic receiver with a low-capacitance on-chip pin photodiode is presented. The receiver is fabricated in a 0.35 mu m opto-CMOS process fed at 3.3V and due to the highly effective integrated pin photodiode it operates at mu W. A regenerative latch acting as a sense amplifier leads in addition to a low electrical power consumption. At 400 Mbit/s, sensitivities of -26.0dBm and -25.5dBm are achieved, respectively, for lambda = 635nm and lambda = 675nm (BER = 10(-9)) with an energy efficiency of 2 pJ/bit. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.3390/s16060761 | SENSORS |
Keywords | Field | DocType |
integrated optoelectronics,integrated pin photodiode,integrating receiver | Sense amplifier,Electric power,Efficient energy use,Electronic engineering,Engineering,dBm,Megabit,Photodiode | Journal |
Volume | Issue | ISSN |
16 | 6 | 1424-8220 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Carlos Sánchez-Azqueta | 1 | 0 | 0.34 |
| Bernhard Goll | 2 | 15 | 6.08 |
| Santiago Celma | 3 | 145 | 43.45 |
| Horst Zimmermann | 4 | 29 | 15.60 |