Title
Full-Component Modeling and Simulation of Charged Device Model ESD.
Abstract
This paper presents a methodology to construct an equivalent circuit model of a packaged integrated circuit mounted on a field-induced charged device model electrostatic discharge tester. Circuit simulation is used to obtain the full-component current and voltage distributions. This paper focuses on predicting overvoltage stress at power domain crossing circuits.
Year
DOI
Venue
2016
10.1109/TCAD.2015.2495196
IEEE Trans. on CAD of Integrated Circuits and Systems
Keywords
Field
DocType
Integrated circuit modeling,Substrates,Junctions,Stress,Electrostatic discharges,Capacitors,Metals
Capacitor,Modeling and simulation,Electrostatic discharge,Computer science,Overvoltage,Electronic engineering,Electronic circuit,Integrated circuit,Electrical engineering,Equivalent circuit,Charged-device model
Journal
Volume
Issue
ISSN
35
7
0278-0070
Citations 
PageRank 
References 
3
0.36
5
Authors
3
Name
Order
Citations
PageRank
Kuo-Hsuan Meng140.84
Vrashank Shukla230.36
Elyse Rosenbaum36121.99