Name
Title | ||
|---|---|---|
FinFET-based product performance: Modeling and evaluation of standard cells in FinFET technologies. |
Abstract | ||
|---|---|---|
Technology scaling has an increasing impact on the resilience of integrated circuits. This leads to the necessity of using new technology-level innovations, such as employing FinFET instead of planar transistors. For such novel devices, performance characteristics, reliability and variability behave potentially different, compared to planar devices. This paper explores different sources of process variations in 14nm technology node and studies their impact on FinFET-based circuit designs. Both TCAD and PTM device models are used and compared with regard to the performance metrics of the circuits. This reveals insights into the behavior of future technology generations. Reliability and variability will be considered. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1016/j.microrel.2015.12.039 | Microelectronics Reliability |
Keywords | Field | DocType |
FinFET,Process variations,Reliability,TDDB | Technology scaling,Electronic engineering,Time-dependent gate oxide breakdown,Planar,Engineering,Electronic circuit,Transistor,Integrated circuit,Reliability engineering | Journal |
Volume | ISSN | Citations |
61 | 0026-2714 | 1 |
PageRank | References | Authors |
0.37 | 3 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shushanik Karapetyan | 1 | 3 | 1.09 |
| Veit Kleeberger | 2 | 57 | 3.83 |
| Ulf Schlichtmann | 3 | 645 | 70.67 |