Name
Title | ||
|---|---|---|
Poly-Si gate electrodes for AlGaN/GaN HEMT with high reliability and low gate leakage current. |
Abstract | ||
|---|---|---|
AlGaN/GaN HEMT with a BF2-implanted polycrystalline Si gate has been characterized through comparison to TiN gate electrodes. Positive threshold voltage (Vth) shift was observed with the addition of F ions, which in turn degraded the effective electron mobility (μeff) by diffusion into the AlGaN/GaN interface and GaN layer. A large reduction in gate leakage current (Jg) was achieved and the property was maintained even after strong reverse-bias stressing. No additional degradation in μeff was observed, suggesting the formation of a stable poly-Si/AlGaN interface. Therefore, poly-Si gate electrodes have advantages in reducing the Jg and robustness against reverse-bias stressing. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1016/j.microrel.2016.05.014 | Microelectronics Reliability |
Keywords | Field | DocType |
Poly-Si gate,Schottky gate,Gate leakage current,Reverse-bias stress,GaN HEMT | Tin,Time-dependent gate oxide breakdown,Electronic engineering,Gate dielectric,Gate oxide,Engineering,High-electron-mobility transistor,Threshold voltage,Electron mobility,Electrode | Journal |
Volume | ISSN | Citations |
63 | 0026-2714 | 0 |
PageRank | References | Authors |
0.34 | 2 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| J. Chen | 1 | 0 | 0.34 |
| Hitoshi Wakabayashi | 2 | 3 | 3.95 |
| Kazuo Tsutsui | 3 | 6 | 9.26 |
| Hiroshi Iwai | 4 | 12 | 12.99 |
| Kuniyuki Kakushima | 5 | 9 | 11.63 |