Name
Title | ||
|---|---|---|
Reliability/Uniformity improvement induced by an ultrathin TiO2 insertion in Ti/HfO2/Pt resistive switching memories. |
Abstract | ||
|---|---|---|
Reliability/Uniformity of resistance switching in Ti/HfO2/Pt memory structure was improved by inserting an interfacial layer of 5nm-thick TiO2 between Ti and 45nm-thick HfO2. As a native oxide of Ti, TiO2, effectively limits the disorder migration of oxygen from HfO2 to Ti layer, and provides the more chemically-stable and morphologically-uniform interfaces with both the Ti electrode and the HfO2 layer. Meanwhile, more stable resistive switching was observed in Ti/TiO2/HfO2/Pt than that in Ti/HfO2/Pt memory, and the random variation during endurance test observed in Ti/HfO2/Pt was also greatly limited in Ti/TiO2/HfO2/Pt memory. From these results, a thin TiO2 insertion between the Ti electrode with the HfO2 active layer, could greatly improve the reliability/uniformity of the Ti/HfO2/Pt memory devices. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1016/j.microrel.2016.05.013 | Microelectronics Reliability |
Keywords | Field | DocType |
RRAM,Hafnium oxide,Reliability | Hafnium oxide,Active layer,Resistive switching,Oxide,Oxygen,Electronic engineering,Engineering,Electrode,Resistive random-access memory | Journal |
Volume | ISSN | Citations |
63 | 0026-2714 | 1 |
PageRank | References | Authors |
0.48 | 0 | 3 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ran Jiang | 1 | 1 | 0.48 |
| Zuyin Han | 2 | 1 | 0.48 |
| Xianghao Du | 3 | 1 | 0.48 |