Title
A 12 To 24 Ghz High Efficiency Fully Integrated 0.18 Mu M Cmos Power Amplifier
Abstract
This letter presents a high efficiency, and small group delay variations 12-24 GHz fully-integrated CMOS power amplifier (PA) for quasi-millimeter wave applications. Maximizing the power added efficiency (PAE), and minimizing the group delay variations in a wideband frequency range are achieved by optimizing the on-chip input, output, and inter-stage matching circuits. In addition, stagger tuning is employed for realizing excellent gain flatness. A two-stage CMOS PA using the proposed methodology is designed and fabricated in 0.18 mu m CMOS technology and tested. A measured power gain (vertical bar S-21 vertical bar) of 10.5 +/- 0.7 dB and a measured small group delay variation of +/- 20 ps over the frequency range of interest are achieved. The PA shows a maximum measured PAE to be 26 % with DC power consumption of 50 mW.
Year
DOI
Venue
2016
10.1587/elex.13.20160551
IEICE ELECTRONICS EXPRESS
Keywords
Field
DocType
power-added efficiency (PAE), power amplifier (PA), quasi-millimeter wave band, CMOS
Computer science,CMOS,Electronic engineering,RF power amplifier,Electrical engineering,Power bandwidth,Cmos power amplifier
Journal
Volume
Issue
ISSN
13
14
1349-2543
Citations 
PageRank 
References 
0
0.34
2
Authors
6
Name
Order
Citations
PageRank
Mosalam, H.121.73
Allam, A.227.12
Hongting Jia324.32
Adel Abdelrahman465.14
Takana Kaho5115.35
Ramesh K. Pokharel61814.49