Name
Abstract | ||
|---|---|---|
Spin-transfer torque random access memory (STT-RAM) and magnetoelectric random access memory (MeRAM) are promising non-volatile memory technologies. But STT-RAM and Me RAM both suffer from high write error rate due to thermal fluctuation of magnetization. Temperature and wafer-level process variation significantly exacerbate these problems. In this paper, we propose a design that adaptively selects optimized write pulse for STT-RAM and MeRAM to overcome ambient process and temperature variation. To enable the adaptive write, we design specific MTJ-based variation monitor, which precisely senses process and temperature variation. The monitor is over 10X faster, 5X more energy-efficient, and 20X smaller compared with conventional thermal monitors of similar accuracy. With adaptive write, the write latency of STT-RAM and MeRAM cache are reduced by up to 17% and 59% respectively, and application run time is improved by up to 41%. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1145/2897937.2897979 | DAC |
Keywords | Field | DocType |
MeRAM, STT-RAM, adaptive write, thermal monitor, process variation, temperature variation, MTJ | Torque,Latency (engineering),Computer science,Cache,Word error rate,Magnetoresistive random-access memory,Electronic engineering,Process variation,Computer hardware,Temperature measurement,Random access | Conference |
Citations | PageRank | References |
1 | 0.36 | 14 |
Authors | ||
6 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shaodi Wang | 1 | 32 | 4.54 |
| Hochul Lee | 2 | 23 | 3.85 |
| Cecile Grezes | 3 | 2 | 0.73 |
| Pedram Khalili | 4 | 23 | 4.29 |
| Kang L. Wang | 5 | 2 | 1.40 |
| Puneet Gupta | 6 | 1158 | 117.59 |