Name
Abstract | ||
|---|---|---|
In this paper, we introduce a novel application of memristor as a radiofrequency (RF) switch. We design and build a nanoscale memristor by placing gold and silver electrodes on silicon oxide with a 35 nm airgap in between. We program the device with a voltage as low as -0.4 V and achieve an ON/OFF conductance ratio of 1012. We test the RF performance of the device up to 110 GHz and report 0.3 dB insertion loss, 30 dB isolation (both at 40 GHz) and an average 35 THz cutoff frequency. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ISCAS.2016.7527249 | 2016 IEEE International Symposium on Circuits and Systems (ISCAS) |
Keywords | Field | DocType |
memristor,radiofrequency switch,nanoscale | Memristor,Optical switch,Computer science,Voltage,Radio frequency,Electronic engineering,Terahertz radiation,Insertion loss,Cutoff frequency,Electrical engineering,Electrode | Conference |
ISSN | ISBN | Citations |
0271-4302 | 978-1-4799-5342-4 | 0 |
PageRank | References | Authors |
0.34 | 0 | 4 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Shuang Pi | 1 | 1 | 1.03 |
| Mohammad Ghadiri-Sadrabadi | 2 | 0 | 0.34 |
| Joseph C. Bardin | 3 | 8 | 1.29 |
| Qiangfei Xia | 4 | 20 | 6.05 |