Name
Abstract | ||
|---|---|---|
In this work, we will review the current progress in high mobility devices and new device architectures. With main focus on (Si)Ge for pMOS and In(Ga)As for nMOS, the benefits and challenges of integrating these materials on a Si platform will be discussed. Next to that, the advantages of tunnel FETs, vertical logic and in general heterogeneous integration will be highlighted. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ICICDT.2016.7542050 | 2016 International Conference on IC Design and Technology (ICICDT) |
Keywords | Field | DocType |
high mobility materials,vertical devices,tunnel FET,heterogeneous integration | NMOS logic,Mobility devices,Electronic engineering,Engineering,MOSFET,PMOS logic,Electrical engineering | Conference |
ISBN | Citations | PageRank |
978-1-5090-0321-1 | 0 | 0.34 |
References | Authors | |
2 | 26 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Nadine Collaert | 1 | 7 | 3.12 |
| A. Alian | 2 | 0 | 0.68 |
| H. Arimura | 3 | 0 | 0.34 |
| Geert Boccardi | 4 | 0 | 0.34 |
| Geert Eneman | 5 | 0 | 1.01 |
| Jacopo Franco | 6 | 22 | 18.53 |
| Tsvetan Ivanov | 7 | 1 | 1.16 |
| Dennis Lin | 8 | 8 | 1.41 |
| Jérôme Mitard | 9 | 1 | 1.79 |
| S. Ramesh | 10 | 0 | 0.68 |
| R. Rooyackers | 11 | 0 | 0.34 |
| M. Schaekers | 12 | 0 | 0.34 |
| A. Sibaya-Hernandez | 13 | 0 | 0.34 |
| S. Sioncke | 14 | 0 | 1.01 |
| Q. Smets | 15 | 0 | 0.68 |
| Abhitosh Vais | 16 | 1 | 1.83 |
| A. Vandooren | 17 | 0 | 0.68 |
| A. Veloso | 18 | 0 | 0.68 |
| A. Verhulst | 19 | 0 | 0.34 |
| D. Verreck | 20 | 0 | 0.68 |
| N. Waldron | 21 | 0 | 0.68 |
| A. Walke | 22 | 0 | 0.34 |
| l witters | 23 | 0 | 1.01 |
| Yu HongYu | 24 | 0 | 1.01 |
| X. Zhou | 25 | 0 | 1.01 |
| Aaron Voon-Yew Thean | 26 | 0 | 0.34 |