Name
Abstract | ||
|---|---|---|
Circuit performance of SiC-MOSFET-based bidirectional isolated DC/DC converters is investigated based on circuit simulation with the physically accurate compact device model HiSIM_HV. It is demonstrated that the combined optimization of the MOSFETs R-on and of the inductances in the transformer can enable a conversion efficiency of more than 97%. The simulation study also verifies that the possible efficiency improvements are diminished due to the MOSFET-performance degradation, namely the carrier-mobility reduction, which results in a limitation of the possible R-on reduction. It is further demonstrated that an optimization of the MOSFET-operation conditions is important to utilize the resulting higher MOSFET performance for achieving additional converter efficiency improvements. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1587/transele.E99.C.1065 | IEICE TRANSACTIONS ON ELECTRONICS |
Keywords | Field | DocType |
circuit simulation, compact model, DC/DC converter, SiC-MOSFET, optimization, conversion efficiency | Energy conversion efficiency,Flyback converter,Forward converter,Electronic engineering,Ćuk converter,Converters,Charge pump,Engineering,Dc dc converter,MOSFET,Electrical engineering | Journal |
Volume | Issue | ISSN |
E99C | 9 | 1745-1353 |
Citations | PageRank | References |
0 | 0.34 | 0 |
Authors | ||
8 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Atsushi Saito | 1 | 0 | 0.68 |
| Kenshiro Sato | 2 | 0 | 0.68 |
| Yuta Tanimoto | 3 | 0 | 1.01 |
| Kai Matsuura | 4 | 0 | 0.68 |
| Yutaka Sasaki | 5 | 2 | 3.28 |
| Mitiko Miura-Mattausch | 6 | 11 | 16.18 |
| Hans Jürgen Mattausch | 7 | 96 | 32.93 |
| Yoshifumi Zoka | 8 | 2 | 3.86 |