Name
Abstract | ||
|---|---|---|
In this study, a CMOS compatible capacitive humidity sensor structure was designed and fabricated on a 200 mm CMOS BEOL Line. A top Al interconnect layer was used as an electrode with a comb/serpent structure, and graphene oxide (GO) was used as sensing material. XRD analysis was done which shows that GO sensing material has a strong and sharp (002) peak at about 10.278 degrees, whereas graphite has (002) peak at about 26 degrees. Device level CV and IV curves were measured in mini-environments at different relative humidity (RH) level, and saturated salt solutions were used to build these mini-environments. To evaluate the potential value of GO material in humidity sensor applications, a prototype humidity sensor was designed and fabricated by integrating the sensor with a dedicated readout ASIC and display/calibration module. Measurements in different mini-environments show that the GO-based humidity sensor has higher sensitivity, faster recovery time and good linearity performance. Compared with a standard humidity sensor, the measured RH data of our prototype humidity sensor can match well that of the standard product. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.3390/s16030314 | SENSORS |
Keywords | Field | DocType |
graphene oxide,relative humidity,capacitive sensing,humidity sensor | Graphene,Relative humidity,Humidity,Electronic engineering,Capacitive sensing,CMOS,Engineering,Electrode,Calibration,Fabrication | Journal |
Volume | Issue | ISSN |
16 | 3.0 | 1424-8220 |
Citations | PageRank | References |
3 | 0.45 | 0 |
Authors | ||
9 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Jinfeng Feng | 1 | 3 | 0.45 |
| Xiaoxu Kang | 2 | 23 | 5.52 |
| Qingyun Zuo | 3 | 4 | 2.43 |
| Chao Yuan | 4 | 4 | 2.43 |
| Weijun Wang | 5 | 3 | 0.79 |
| Yuhang Zhao | 6 | 3 | 1.13 |
| Limin Zhu | 7 | 180 | 35.43 |
| Hanwei Lu | 8 | 3 | 0.79 |
| Juying Chen | 9 | 3 | 0.45 |