Title
A ReRAM-Based 4T2R Nonvolatile TCAM Using RC-Filtered Stress-Decoupled Scheme for Frequent-OFF Instant-ON Search Engines Used in IoT and Big-Data Processing.
Abstract
This paper outlines the RC-filtered stress-decoupled (RCSD) 4T2R nonvolatile TCAM (nvTCAM) with the following benefits: 1) reduced NVM-stress; 2) reduced ML parasitic load; and 3) suppression of match-line (ML) leakage current from match cells. The RCSD-4T2R cell achieves a 6× reduction in NVM-stress, a 2× increase in maximum wordlength, and a 2× reduction in search delay. In this paper, we also o...
Year
DOI
Venue
2016
10.1109/JSSC.2016.2602218
IEEE Journal of Solid-State Circuits
Keywords
Field
DocType
Nonvolatile memory,Stress,Transistors,DSL,Leakage currents,Delays,Discharges (electric)
Search engine,Content-addressable memory,Leakage (electronics),Digital subscriber line,Computer science,Electronic engineering,Non-volatile memory,Transistor,Macro,Resistive random-access memory
Journal
Volume
Issue
ISSN
51
11
0018-9200
Citations 
PageRank 
References 
2
0.37
10
Authors
10
Name
Order
Citations
PageRank
Meng-Fan Chang145945.63
Li-Yue Huang2252.56
Wen-Zhang Lin381.18
Yen-Ning Chiang4131.93
Chia-Chen Kuo518720.28
Ching-Hao Chuang6493.95
Keng-Hao Yang7273.21
Hsiang-Jen Tsai8423.67
Tien-Fu Chen9890123.83
Shyh-Shyuan Sheu1021123.45