Name
Title | ||
|---|---|---|
Design Space Exploration of FinFETs with Double Fin Heights for Standard Cell Library. |
Abstract | ||
|---|---|---|
This paper proposes a method to explore the design space of FinFETs with double fin heights. Our study shows that if one fin height is sufficiently larger than the other and the greatest common divisor of their equivalent transistor widths is small, the fin height pair will incur less width quantization effect and lead to better area efficiency. We design a standard cell library based on this technology using a tailored FreePDK15. With respect to a standard cell library designed with FreePDK15, about 86% of the cells designed with FinFETs of double fin heights have a smaller delay and 54% of the cells take a smaller area. We also demonstrate the advantages of FinFETs with double fin heights through chip designs using our cell library. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/ISVLSI.2016.72 | IEEE Computer Society Annual Symposium on VLSI |
Keywords | Field | DocType |
FinFET,standard cell library,double fin heights,layout,parasitics | Topology,Logic gate,Fin,Chip,Standard cell,Engineering,Transistor,MOSFET,Design space exploration,Parasitic extraction,Electrical engineering | Conference |
ISSN | Citations | PageRank |
2159-3469 | 1 | 0.46 |
References | Authors | |
3 | 7 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Chi-Hung Lin | 1 | 217 | 34.67 |
| Chia-Shiang Chen | 2 | 1 | 0.46 |
| Yu-He Chang | 3 | 1 | 0.46 |
| Yu Ting Zhang | 4 | 1 | 0.46 |
| Shang-Rong Fang | 5 | 6 | 1.39 |
| Santanu Santra | 6 | 8 | 1.02 |
| Rung-Bin Lin | 7 | 173 | 28.42 |