Name
Abstract | ||
|---|---|---|
An overview of recent results concerning THz detection related to plasma nonlinearities in nanometer field effect transistors is presented. In particular, the research on the dynamic range of these detectors is described and two different technologies GaAs and GaN are compared. As a conclusion, we will show first real world applications of the plasma field effect transistors based THz detectors: demonstrators of the imagers (cameras and linear scanners) developed for fast postal security and for nondestructive industrial quality control. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/MIXDES.2016.7529703 | 2016 MIXDES - 23rd International Conference Mixed Design of Integrated Circuits and Systems |
Keywords | Field | DocType |
Terahertz detectors,GaN THz FETs,THz cameras,security scanners | Gallium nitride,Logic gate,Dynamic range,Computer science,Field-effect transistor,Electronic engineering,Terahertz radiation,Nanometre,Plasma,Optoelectronics,Detector | Conference |
ISBN | Citations | PageRank |
978-1-5090-3099-6 | 0 | 0.34 |
References | Authors | |
0 | 11 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Wojciech Knap | 1 | 36 | 10.83 |
| Dmytro B. But | 2 | 0 | 1.35 |
| Nina Dyakonova | 3 | 2 | 1.59 |
| Dominique Coquillat | 4 | 0 | 0.34 |
| Frederic Teppe | 5 | 0 | 1.01 |
| Jaroslaw Suszek | 6 | 0 | 0.34 |
| Agnieszka M. Siemion | 7 | 0 | 0.68 |
| Maciej Sypek | 8 | 0 | 0.68 |
| Krzesimir Szkudlarek | 9 | 0 | 0.68 |
| G. Cywiński | 10 | 0 | 1.69 |
| Ivan Yahniuk | 11 | 0 | 0.68 |