Title
Development of high sensitivity CMOS-MEMS inertia sensor and its application to early-stage diagnosis of Parkinson's disease
Abstract
In this paper, we present our recent progress of a high sensitivity complementary metal-oxide semiconductor-microelectromechanical systems (CMOS-MEMS) inertia sensor and its application to early-stage diagnosis of Parkinson's disease. The feature of the CMOS-MEMS sensor is the use of gold proof mass. High density of gold enables us to increase sensitivity by reducing thermo-mechanical noise that is inversely proportional to proof mass. We then show the developed CMOS-MEMS multi-physics design environment. An equivalent circuit of a MEMS accelerometer has been designed to simultaneously understand both the mechanical and the electrical behaviors. One of the potential applications of the high sensitivity inertia sensor is also discussed by focusing on early-stage diagnosis of Parkinson's disease.
Year
DOI
Venue
2016
10.1109/ESSDERC.2016.7599596
2016 46th European Solid-State Device Research Conference (ESSDERC)
Keywords
Field
DocType
CMOS-MEMS,gold proof mass,inertia sensor,multi-physics design environment,Parkinson's disease
Parkinson's disease,Proof mass,Microelectromechanical systems,Accelerometer,Electronic engineering,Cmos mems,Acceleration,Inertia,Materials science,Electrical engineering,Equivalent circuit
Conference
ISSN
ISBN
Citations 
1930-8833
978-1-5090-2970-9
0
PageRank 
References 
Authors
0.34
2
5
Name
Order
Citations
PageRank
Kazuya Masu112036.37
Daisuke Yamane254.53
Katsuyuki Machida3186.81
Masato Sone401.69
Yoshihiro Miyake510723.98