Name
Abstract | ||
|---|---|---|
Emerging spin orbit torque (SOT) promises to achieve high-speed write operation for magnetoresistive random access memory (MRAM) since it can eliminate the incubation delay of the conventional spin transfer torque (STT). Such a speed improvement allows the MRAM to be used as low-level cache in the computer architecture. Among various SOT technologies, spin-Hall-assisted STT is a potential candidate thanks to its magnetic-field-free benefit. In this work, we evaluate the potential of the spin-Hall-assisted STT-MRAM in the cache replacement. Firstly, the bit-cell parameters are obtained from the circuit-level simulation. Then, the cache evaluation and system-level simulation are performed with NVSim and Gem5 simulators. Simulation results validate the advantage of the spin-Hall-assisted STT in the write speed and energy. Moreover, for the large capacity (about >2 MB), the spin-Hall-assisted STT-MRAM is a competitive candidate for replacing the conventional SRAM-based cache. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1145/2950067.2950107 | 2016 IEEE/ACM International Symposium on Nanoscale Architectures (NANOARCH) |
Keywords | Field | DocType |
spin orbit torque (SOT),spin transfer torque (STT),magnetoresistive random access memory (MRAM),cache replacement,NVSim,GEM5 | Spin orbit torque,Spin-½,Computer science,Cache,Parallel computing,Static random-access memory,Magnetoresistive random-access memory,Spin-transfer torque,Computer hardware,Embedded system | Conference |
ISSN | ISBN | Citations |
2327-8218 | 978-1-4673-8927-3 | 4 |
PageRank | References | Authors |
0.47 | 9 | 6 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| Liang Chang | 1 | 23 | 14.22 |
| Zhaohao Wang | 2 | 8 | 2.25 |
| Yuqian Gao | 3 | 5 | 0.86 |
| Wang Kang | 4 | 161 | 27.54 |
| Youguang Zhang | 5 | 21 | 7.75 |
| Weisheng Zhao | 6 | 730 | 105.43 |