Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS. - Citegraph

Paper Info

Title
Embedded memory and ARM Cortex-M0 core using 60-nm C-axis aligned crystalline indium-gallium-zinc oxide FET integrated with 65-nm Si CMOS.

Abstract
Low-power embedded memory and an ARM Cortex-M0 core that operate at 30 MHz were fabricated in combination with a 60-nm c-axis aligned crystalline indium-gallium-zinc oxide FET and a 65-nm Si CMOS. The embedded memory adopted a structure wherein oxide semiconductor-based 1T1C cells are stacked on Si sense amplifiers. This memory achieved a standby power of 3 nW while retaining data and an active po...

Year	DOI	Venue
2017	10.1109/JSSC.2016.2632303	IEEE Journal of Solid-State Circuits
Keywords	DocType	Volume
Field effect transistors,Capacitors,Silicon,Power demand,Layout,Memory management,Arrays	Journal	52
Issue	ISSN	Citations
4	0018-9200	2
PageRank	References	Authors
0.45	2	16

Authors (16 rows)

Cited by (2 rows)

References (2 rows)

Name	Order	Citations	PageRank
Tatsuya Onuki	1	8	1.01
Uesugi, W.	2	12	1.97
Tamura, H.	3	24	4.33
Atsuo Isobe	4	11	1.78
yoshinori ando	5	2	1.80
S. Okamoto	6	127	38.97
Kiyoshi Kato	7	15	2.13
T. R. Yew	8	2	0.45
Chen Bin Lin	9	2	0.45
J. Y. Wu	10	2	0.45
Chi Chang Shuai	11	2	0.45
Klaus Doppler	12	1723	153.67
Klaus Doppler	13	1723	153.67
James Myers	14	5	0.88
Masahiro Fujita	15	143	42.49
Shunpei Yamazaki	16	30	5.82

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