Title
Thermal-mechanical reliability analysis of connection structure between redistribution layer and TSV for MEMS packaging
Abstract
This paper proposes a combination of annular copper and cylindrical copper as the TSV conductor to decrease the effect of thermal mismatch between copper and silicon in MEMS packaging, which results in a reliability risk between redistribution layer (RDL) and TSV. There are three important factors which may have the most serious influence on the reliability being simulated and analyzed. They are the opening diameter of RDL in insulation layer, the thickness of cylindrical copper and the thickness of insulation layer at the bottom of TSV. It is significant to understand the effect of the three factors and get the optimum structure parameters which can reduce the effect of the risky connection structure on the package reliability obviously.
Year
DOI
Venue
2016
10.1109/NEMS.2016.7758273
2016 IEEE 11th Annual International Conference on Nano/Micro Engineered and Molecular Systems (NEMS)
Keywords
DocType
ISSN
MEMS packaging,reliability,RDL opening,copper thickness,insulation layer thickness
Conference
2474-3747
ISBN
Citations 
PageRank 
978-1-5090-1948-9
0
0.34
References 
Authors
0
5
Name
Order
Citations
PageRank
Wei Meng129430.14
Qinghua Zeng2429.85
Yong Guan323221.02
Jing Chen452.08
Jin Yufeng589.51