Name
Abstract | ||
|---|---|---|
Memristor-based material implication (M-IMP) logic is popular with logic operations, which provides a possibility that memory is operated directly. However, there is a small limitation that memristor is not able to reach the lowest resistance in M-IMP. In this brief, the M-IMP limitation and its influence are analyzed briefly. In addition, a circuit structure that performs a stateful logic operation on memristor memory based on a nanocrossbar is proposed, which can perfect the M-IMP limitation and eliminate the influence. Moreover, we simulate the proposed circuit design and the simulation results verify the correctness of the analysis. |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/TCAD.2016.2578881 | IEEE Trans. on CAD of Integrated Circuits and Systems |
Keywords | Field | DocType |
Memristors,Steady-state,Threshold voltage,Integrated circuit modeling,Logic circuits,Computer architecture,CMOS integrated circuits | Logic gate,Memristor,Sequential logic,Computer science,Logic optimization,Electronic engineering,Memistor,Logic family,Register-transfer level,Asynchronous circuit | Journal |
Volume | Issue | ISSN |
36 | 2 | 0278-0070 |
Citations | PageRank | References |
4 | 0.51 | 8 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Qiao Chen | 1 | 4 | 1.53 |
| Xiaoping Wang | 2 | 67 | 15.51 |
| Haibo Wan | 3 | 14 | 1.00 |
| Ran Yang | 4 | 91 | 9.74 |