Title
Multipage Read for nand Flash.
Abstract
NAND flash memories achieve very high densities through a series connection of all cells in a bitline. In current memories, each wordline is read independently by biasing all the other cells to act as pass transistors and sensing all the bitlines in parallel. This brief proposes a new method that reads multiple wordlines simultaneously and returns a combination of their stored information. This mu...
Year
DOI
Venue
2017
10.1109/TCSII.2016.2551556
IEEE Transactions on Circuits and Systems II: Express Briefs
Keywords
Field
DocType
Threshold voltage,Programming,Logic gates,Transistors,Interference,Computer architecture,Sensors
Logic gate,Computer science,Electronic engineering,NAND gate,NAND logic,Interference (wave propagation),Decoding methods,Series and parallel circuits,Transistor,Computer hardware,Speedup
Journal
Volume
Issue
ISSN
64
1
1549-7747
Citations 
PageRank 
References 
0
0.34
10
Authors
2
Name
Order
Citations
PageRank
Tianqiong Luo131.76
Borja Peleato24095142.71