Paper Info
Title
Impact of resistive paths on NVM array reliability: Application to Flash & ReRAM memories.
Abstract
In memory technology, size reduction induces consequences in terms of reliability, including an increase in the line resistances and a voltage drop along the line during memory operation. This problem can occur in Flash products during sector erase mode, and in resistive RAM (ReRAM) during forming, reset or word-reading modes.
Year
DOI
Venue
2016
10.1016/j.microrel.2016.07.096
Microelectronics Reliability
Keywords
Field
DocType
Line resistance,Voltage drop
Line resistance,Flash memory,Resistive touchscreen,Voltage drop,Electronic engineering,Size reduction,Engineering,Electrical engineering,Threshold voltage,Imagination,Resistive random-access memory
Journal
Volume
ISSN
Citations 
64
0026-2714
0
PageRank 
References 
Authors
0.34
0
3
Name
Order
Citations
PageRank
Pierre Canet100.34
Jérémy Postel-Pellerin222.74
Hassen Aziza35517.38