Name
Abstract | ||
|---|---|---|
Electromagnetic Interference (EMI) degrades the performance of voltage and current references, due to its finite Power Supply Rejection Ratio (PSRR). The design of a 90 dB PSRR, 4 dBm EMI resistant MOSFET-Only Voltage Reference is herein presented. The Voltage Reference is designed based on the Zero Temperature Coefficient (ZTC) transistor point. The high-PSRR is obtained using zero-V
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transistors as active loads in the open and feedback loop of the circuit. The final circuit was designed in a 130 nm CMOS process and occupies around 0.014 mm
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of silicon area while consuming just 1.15 μW. Postlayout simulations present a 206 mV of Voltage Reference with a Temperature Coefficient of 321 ppm/° C, for the temperature range from -55 to 125 ° C. An EMI source of 4 dBm (1 V
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) injected in the power supply, according to the Direct Power Injection (DPI) standard, yield in a maximum DC Shift and Peak-to-Peak ripple of -0.17 % and 822 μV
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, respectively. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/LASCAS.2016.7451012 | 2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS) |
Keywords | Field | DocType |
Voltage Reference,Electromagnetic Compatibility and Interference,ZTC Condition,zero-VT Transistor | Computer science,Electromagnetic interference,Voltage,Voltage reference,Electronic engineering,Power supply rejection ratio,MOSFET,Threshold voltage,Electrical engineering,EMI,Switched-mode power supply | Conference |
ISSN | Citations | PageRank |
2330-9954 | 0 | 0.34 |
References | Authors | |
0 | 5 | |
Name | Order | Citations | PageRank |
|---|---|---|---|
| David Cordova | 1 | 22 | 6.09 |
| Pedro Toledo | 2 | 9 | 4.47 |
| hamilton klimach | 3 | 71 | 20.07 |
| sergio bampi | 4 | 496 | 102.12 |
| Eric E. Fabris | 5 | 19 | 11.33 |