Name
Abstract | ||
|---|---|---|
In this work a novel resistorless MOSFET 3-transistor voltage reference that operates in the picowatt range and occupies very small area is proposed. The circuit is based on a self-cascode structure that is biased in subthreshold condition using the leakage current provided by a reverse biased MOSFET diode. Its electrical behavior is analytically described and a design methodology is presented to allow the transistors sizing for optimal temperature compensation. Simulation results for a standard 130 nm CMOS process are presented to validated the proposed circuit topology. A reference voltage of 85 mV is obtained with a temperature coefficient (TC) of 17.4 ppm/°C and consuming only 7 pW under 0.3 V of power supply at room temperature. Monte Carlo analysis shows that the reference voltage σ/μ<; 3.3% and that 90% of the samples present TC<;50 ppm/°C without trimming. |
Year | DOI | Venue |
|---|---|---|
2016 | 10.1109/LASCAS.2016.7451060 | 2016 IEEE 7th Latin American Symposium on Circuits & Systems (LASCAS) |
Keywords | Field | DocType |
Voltage reference,subthreshold,ultra-low power,ultra-low voltage,picowatt | Leakage (electronics),Computer science,Overdrive voltage,Voltage reference,Temperature coefficient,Electronic engineering,Subthreshold conduction,MOSFET,Threshold voltage,Bandgap voltage reference | Conference |
Citations | PageRank | References |
1 | 0.41 | 0 |
Authors | ||
4 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| arthur c de oliveira | 1 | 19 | 3.15 |
| Jhon Gomez Caicedo | 2 | 1 | 0.41 |
| hamilton klimach | 3 | 71 | 20.07 |
| sergio bampi | 4 | 496 | 102.12 |