Title
Design of high-performance CMOS tunable active inductor
Abstract
In this paper, a new single-ended tunable active inductor (TAI) based on the use of two simples transconducters is proposed. A feedback resistance is added to improve the quality factor, while the tuning range of the desired inductance value is achieved by using a network of capacitance. The TAI has been implemented in a MS/RF 90 nm CMOS technology and a 1-V supply is used. The simulation results show that an inductance tuning range from 3.55 to 50 nH can be achieved. A high quality factor of 895 is obtained at the frequency 1.82 GHz. The circuit occupies a small active area of 22 × 27.5 mm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , presents a noise level of less than 4.2nV/√(Hz), and consumes a power of 0.5 mW.
Year
DOI
Venue
2016
10.1109/IDT.2016.7843047
2016 11th International Design & Test Symposium (IDT)
Keywords
Field
DocType
CMOS,Active Inductor,Feedback Resistor,Gyrator-C,Q-factor
Q factor,Inductance,Capacitance,Computer science,Noise level,Inductor,CMOS,Electronic engineering,Electrical engineering
Conference
ISSN
ISBN
Citations 
2162-061X
978-1-5090-4901-1
0
PageRank 
References 
Authors
0.34
5
4
Name
Order
Citations
PageRank
Saad, S.164.40
Mhiri, M.264.40
Aymen Ben Hammadi301.01
Kamel Besbes44415.41