Paper Info
Title
A Test Method for Finding Boundary Currents of 1T1R Memristor Memories
Abstract
Memristor is a resistive device which is considered as an alternative non-volatile device for future non-volatile memories. For a memristor memory, a reference current is needed for discriminating the high-resistance (ROFF) state from low-resistance (RON) state. The reference current has an impact on the yield and reliability of the memristor memory. In this paper, we propose a test method in associate with a current comparing circuit for finding the boundary currents of ROFF and RON states. Therefore, the user can set a good reference current according to the boundary currents. Simulation results show that if our test method is used to identify the boundary currents, 2.05% and 3.68% memristor cells which may be read incorrectly due to process variation for ROFF/RON = 50 and 3 can be eliminated, respectively.
Year
DOI
Venue
2016
10.1109/ATS.2016.44
2016 IEEE 25th Asian Test Symposium (ATS)
Keywords
Field
DocType
Memristor,non-volatile memory,process variation,test,reliability
Test method,Logic gate,Memristor,Computer science,Electronic engineering,Non-volatile memory,Process variation,Memistor,Transistor,Electrical engineering,Resistive random-access memory
Conference
ISSN
ISBN
Citations 
1081-7735
978-1-5090-3810-7
0
PageRank 
References 
Authors
0.34
11
6
Name
Order
Citations
PageRank
Tzu-Ying Lin100.34
Yong-Xiao Chen2132.13
Jin-Fu Li366259.17
chihyen lo4578.68
Ding-Ming Kwai5182.72
Yung-Fa Chou6102.26