Name
Abstract | ||
|---|---|---|
Highly scaled indium phosphide (InP) heterojunction bipolar transistor (HBT) technologies have been demonstrated with maximum frequencies of oscillation ( f max) of >1 THz and circuit operation has been extended into the lower end of the terahertz (THz) frequency band. InP HBTs offer high radio-frequency (RF) output power density, millivolt (mV) threshold uniformity, and high levels of integration... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/JPROC.2017.2692178 | Proceedings of the IEEE |
Keywords | DocType | Volume |
Heterojunction bipolar transistors,Indium phosphide,III-V semiconductor materials,Integrated circuits,Conductivity,Indium gallium arsenide,Terahertz materials,Electronics,Radio frequency | Journal | 105 |
Issue | ISSN | Citations |
6 | 0018-9219 | 4 |
PageRank | References | Authors |
0.67 | 0 | 5 |
Name | Order | Citations | PageRank |
|---|---|---|---|
| M. Urteaga | 1 | 16 | 7.43 |
| Zach Griffith | 2 | 23 | 5.45 |
| Munkyo Seo | 3 | 73 | 9.85 |
| Jonathan Hacker | 4 | 16 | 2.56 |
| Mark J. W. Rodwell | 5 | 9 | 1.93 |