Name
Title | ||
|---|---|---|
Design of Temperature-Aware Low-Voltage 8T SRAM in SOI Technology for High-Temperature Operation (25 %C-300 %C). |
Abstract | ||
|---|---|---|
A temperature-aware low-voltage 8T static random access memory (SRAM) for high-temperature operations is presented. A dedicated read port with virtual ground and optimal body bias improves sensing margin under very high temperature (up to 300 °C). Bitline offset voltage for data “0” caused by the virtual ground scheme is also compensated by a replica bitline. The independent body bias control feat... |
Year | DOI | Venue |
|---|---|---|
2017 | 10.1109/TVLSI.2017.2686600 | IEEE Transactions on Very Large Scale Integration (VLSI) Systems |
Keywords | Field | DocType |
Random access memory,Temperature sensors,Silicon-on-insulator,Topology,Land surface temperature,Reliability | Silicon on insulator,Virtual ground,Input offset voltage,Computer science,Voltage,Electronic engineering,Static random-access memory,Real-time computing,Process variation,Low voltage,Electrical engineering,Clock rate | Journal |
Volume | Issue | ISSN |
25 | 8 | 1063-8210 |
Citations | PageRank | References |
0 | 0.34 | 6 |
Authors | ||
2 | ||
Name | Order | Citations | PageRank |
|---|---|---|---|
| Ngoc Le Ba | 1 | 1 | 2.08 |
| Tae-hyoung Kim | 2 | 163 | 35.19 |